Datasheet > AO4817_10

AO4817_10

更新时间： 2024-11-18 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	174K
描述
25V Dual P-Channel MOSFET

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AO4817_10 数据手册

AO4817

25V Dual P-Channel MOSFET

General Description

Product Summary

The AO4817 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM applications. The

device is ESD protected.

V_DS(V) = -30V

I_D= -8A (V_GS= -20V)

R_DS(ON)< 18mΩ (V_GS= -20V)

_DS(ON)< 21mΩ (V_GS= -10V)

ESD Rating: 1.5KV HBM

100% UIS Tested

100% Rg tested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±25

-8

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

I_D

-6.9

Pulsed Drain Current ^B

I_DM

-40

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

1.44

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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