AO4816L

更新时间： 2024-10-30 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	134K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO4816L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

AO4816L 数据手册

AO4816

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4816 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

dual device is suitable for use as a load switch or in

PWM applications. Standard Product AO4816 is Pb-

free (meets ROHS & Sony 259 specifications).

AO4816L is a Green Product ordering option.

AO4816 and AO4816L are electrically identical.

V_DS(V) = 30V

I_D= 8.5A

R_DS(ON)< 17mΩ (V_GS= 20V)

_DS(ON)< 20mΩ (V_GS= 10V)

R_DS(ON)< 46mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current^B

±25

8.5

T_A=25°C

T_A=70°C

I_D

6.5

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient^A

Maximum Junction-to-Lead^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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与AO4816L相关器件

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AO4818	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4818 (KO4818)	KEXIN	获取价格	Dual N-Channel MOSFET
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