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AO4817 PDF预览

AO4817

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 107K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

AO4817 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.57
最大漏极电流 (Abs) (ID):8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

AO4817 数据手册

 浏览型号AO4817的Datasheet PDF文件第2页浏览型号AO4817的Datasheet PDF文件第3页浏览型号AO4817的Datasheet PDF文件第4页 
AO4817  
Dual P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4817 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge with a 25V gate rating. This device is suitable  
for use as a load switch or in PWM applications. The  
device is ESD protected. Standard Product AO4817  
is Pb-free (meets ROHS & Sony 259 specifications).  
AO4817L is a Green Product ordering option.  
VDS (V) = -30V  
ID = -8A (VGS = -20V)  
R
DS(ON) < 18m(VGS = -20V)  
DS(ON) < 21m(VGS = -10V)  
R
ESD Rating: 1.5KV HBM  
AO4817 and AO4817L are electrically identical.  
D1  
D2  
S2  
S2  
G2  
S1  
G1  
1
2
3
4
8
7
6
5
D2  
D2  
D1  
D1  
G1  
G2  
S1  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±25  
-8  
V
A
TA=25°C  
TA=70°C  
ID  
-6.9  
Pulsed Drain Current B  
IDM  
-40  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation A  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
50  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
73  
RθJL  
31  
Alpha & Omega Semiconductor, Ltd.  

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