AO4817L

更新时间： 2024-11-18 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	107K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO4817L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO4817L 数据手册

AO4817

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4817 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM applications. The

device is ESD protected. Standard Product AO4817

is Pb-free (meets ROHS & Sony 259 specifications).

AO4817L is a Green Product ordering option.

V_DS(V) = -30V

I_D= -8A (V_GS= -20V)

_DS(ON)< 18mΩ (V_GS= -20V)

_DS(ON)< 21mΩ (V_GS= -10V)

ESD Rating: 1.5KV HBM

AO4817 and AO4817L are electrically identical.

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±25

-8

T_A=25°C

T_A=70°C

I_D

-6.9

Pulsed Drain Current ^B

I_DM

-40

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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