Datasheet > AO4420A_10

AO4420A_10

更新时间： 2024-09-13 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	170K
描述
30V N-Channel MOSFET

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AO4420A_10 数据手册

AO4420A

30V N-Channel MOSFET

General Description

Product Summary

The AO4420A uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity

and body diode characteristics. This device is

suitable for use as a synchronous switch in PWM

applications.

V_DS(V) = 30V

I_D= 13.7A (V_GS= 10V)

R_DS(ON)< 10.5mΩ (V_GS= 10V)

_DS(ON)< 12mΩ (V_GS= 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

13.7

9.7

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

I_D

Pulsed Drain Current ^B

Avalanche Current ^B

Repetitive avalanche energy L=0.3mH ^B

I_DM

I_AR

E_AR

T_A=25°C

3.1

P_D

°C

T_A=70°C

Power Dissipation

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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