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AO4422 PDF预览

AO4422

更新时间: 2024-09-12 22:05:43
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 186K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4422 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.56
Is Samacsys:NBase Number Matches:1

AO4422 数据手册

 浏览型号AO4422的Datasheet PDF文件第2页浏览型号AO4422的Datasheet PDF文件第3页浏览型号AO4422的Datasheet PDF文件第4页 
Jan 2003  
AO4422  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4422 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. The source leads are separated to allow  
a Kelvin connection to the source, which may be  
used to bypass the source inductance.  
VDS (V) = 30V  
ID = 11A  
RDS(ON) < 15m(VGS = 10V)  
DS(ON) < 24m(VGS = 4.5V)  
R
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
V
VDS  
Drain-Source Voltage  
30  
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
11  
9.3  
50  
3
V
TA=25°C  
TA=70°C  
ID  
IDM  
A
Pulsed Drain Current B  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
t 10s  
Steady-State  
Steady-State  
RθJA  
59  
75  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  

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