Datasheet > AO4427_10

AO4427_10

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	174K
描述
30V P-Channel MOSFET

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AO4427_10 数据手册

AO4427

30V P-Channel MOSFET

General Description

Product Summary

The AO4427 uses advanced trench technology to

provide excellent R_DS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM applications. The

device is ESD protected.

V_DS(V) = -30V

I_D= -12.5 A (V_GS= -20V)

R_DS(ON)< 12mΩ (V_GS= -20V)

_DS(ON)< 14mΩ (V_GS= -10V)

ESD Rating: 2KV HBM

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±25

-12.5

-10.5

-60

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

Pulsed Drain Current ^B

I_D

I_DM

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

2.1

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^AF

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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