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AO4425L PDF预览

AO4425L

更新时间: 2024-11-20 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 111K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4425L 数据手册

 浏览型号AO4425L的Datasheet PDF文件第2页浏览型号AO4425L的Datasheet PDF文件第3页浏览型号AO4425L的Datasheet PDF文件第4页 
AO4425  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4425 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge with a 25V gate rating. This device is suitable  
for use as a load switch or in PWM applications. It is  
ESD protected. Standard Product AO4425 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4425L  
is a Green Product ordering option. AO4425 and  
AO4425L are electrically identical.  
VDS (V) = -38V  
ID = -14A (VGS = -20V)  
R
DS(ON) < 10m(VGS = -20V)  
DS(ON) < 11m(VGS = -10V)  
R
ESD Rating: 4000V HBM  
SOIC-8  
Top View  
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-38  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±25  
-14  
V
A
TA=25°C  
TA=70°C  
ID  
-11  
Pulsed Drain Current B  
IDM  
-50  
TA=25°C  
TA=70°C  
3.1  
PD  
W
Power Dissipation A  
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
26  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
50  
75  
RθJL  
14  
24  
Alpha & Omega Semiconductor, Ltd.  

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