Datasheet > AO4433L

AO4433L

更新时间： 2024-11-18 21:16:43

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	461K
描述
Transistor

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技术参数
数据手册

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AO4433L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81
Base Number Matches：	1

AO4433L 数据手册

AO4433

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4433/L uses advanced trench technology to

provide excellent R_DS(ON)and ultra-low low gate charge

with a 25V gate rating. This device is suitable for use

as a load switch or in PWM applications.AO4433 and

AO4433L are electrically identical.

V_DS(V) = -30V

I_D= -11 A

(V_GS= -20V)

R_DS(ON)< 14mΩ (V_GS= -20V)

_DS(ON)< 18mΩ (V_GS= -10V)

R_DS(ON)< 36mΩ (V_GS= -5V)

-RoHS Compliant

-AO4433 is Halogen Free

ESD PROTECTED!

UIS TESTED!

Ciss,Coss,Crss Tested!

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

Continuous Drain

Current ^AF

V_GS

±25

-11

T_A=25°C

T_A=70°C

I_D

-9.7

-50

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

Avalanche Current ^B

2.1

I_AR

-36

Repetitive avalanche energy 0.1mH^B

E_AR

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^AF

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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与AO4433L相关器件

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AO4437	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
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