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AO4435 PDF预览

AO4435

更新时间: 2024-09-15 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 170K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4435 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:GREEN, SOIC-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.99
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):10.5 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):3.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO4435 数据手册

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AO4435  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4435 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate charge  
with a 25V gate rating. This device is suitable for use as  
a load switch or in PWM applications. Standard Product  
AO4435 is Pb-free (meets ROHS & Sony 259  
specifications).  
VDS = -30V  
ID = -10A  
(VGS = -10V)  
R
R
DS(ON) < 18m(VGS = -10V)  
DS(ON) < 36m(VGS = -5V)  
SOIC-8  
Top View  
D
S
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
10 Sec  
Steady State  
-30  
Units  
Drain-Source Voltage  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±25  
V
A
TA=25°C  
TA=70°C  
-10  
-8  
-8  
-6  
ID  
Pulsed Drain Current B  
IDM  
-80  
TA=25°C  
TA=70°C  
3.1  
2.0  
1.7  
1.1  
Power Dissipation A  
PD  
W
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
32  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady State  
Steady State  
60  
75  
RθJL  
17  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

AO4435 替代型号

型号 品牌 替代类型 描述 数据表
FDS6681Z FAIRCHILD

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