AO4422AL

更新时间： 2024-10-30 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	121K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4422AL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

AO4422AL 数据手册

AO4422A

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4422A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance. Standard

Product AO4422A is Pb-free (meets ROHS & Sony

259 specifications). AO4422AL is a Green Product

ordering option. AO4422A and AO4422AL are

electrically identical.

V_DS(V) = 30V

I_D= 11A

(V_GS= 10V)

R_DS(ON)< 15mΩ (V_GS= 10V)

R_DS(ON)< 24mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

T_A=25°C

T_A=70°C

I_D

9.3

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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