Datasheet > AO4421_10

AO4421_10

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	161K
描述
60V P-Channel MOSFET

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AO4421_10 数据手册

AO4421

60V P-Channel MOSFET

General Description

Product Summary

V_DS

The AO4421 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

-60V

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS= -4.5V)

-6.2A

< 40mΩ

< 50mΩ

100% UIS Tested

100% R_gTested

SO8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-60

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-6.2

Continuous Drain

Current ^A

I_D

-5

Pulsed Drain Current ^B

I_DM

-40

3.1

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Rev 3: Nov 2010

www.aosmd.com

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