Datasheet > AO4421

AO4421

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	373K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-6.2A;Vgs(th)(V):±20;漏源导通电阻:40mΩ@-10V

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AO4421 数据手册

AO4421

-60V P-Channel MOSFET

UMW

General Description

The AO4421 combines advanced trench

MOSFET technology with a low resistance

package to provide extremely low R

DS(ON)

This device is ideal for load switch and battery

protection applications.

Product Summary

V_DS

-60V

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS= -4.5V)

-6.2A

< 40mΩ

< 50mΩ

Absolute Maximum RatingsT =25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-60

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-6.2

Continuous Drain

Current ^A

I_D

-5

Pulsed Drain Current ^B

I_DM

-40

3.1

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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