Datasheet > AO3434

AO3434

更新时间： 2024-11-18 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	455K
描述
30V N-Channel MOSFET

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AO3434 数据手册

AO3434

30V N-Channel MOSFET

General Description

The AO3434 uses advanced trench technology to provide excellent R

_DS(ON)and low gate charge.

This device is suitable for use as a load switch or

in PWM applications. It is ESD protected.

Features

V_DS(V) = 30V

I_D= 4.2A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 52mΩ

R_DS(ON)< 75mΩ

ESD protected

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Maximum

Steady-State

Parameter

Drain-Source Voltage

Symbol 10 sec

V_DS

Units

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

4.2

3.3

3.5

2.8

Continuous Drain

Current ^A,F

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

0.9

1.0

P_D

°C

Power Dissipation

0.64

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

100

Max

125

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

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