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AN101

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威世 - VISHAY		/
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MOSFETs

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AN101

An Introduction to FETs

The family tree of FET devices (Figure 1) may be divided

into two main branches, Junction FETs (JFETs) and Insu-

lated Gate FETs (or MOSFETs, metal-oxide- semicon-

ductor field-effect transistors). Junction FETs are in-

herently depletion-mode devices, and are available in

both n- and p-channel configurations. MOSFETs are

available in both enhancement and depletion modes, and

also exist as both n- and p-channel devices. The two main

FET groups depend on different phenomena for their op-

eration, and will be discussed separately.

Introduction

The basic principle of the field-effect transistor (FET) has

been known since J. E. Lilienfeld’s patent of 1925. The

theoretical description of a FET made by Shockley in

1952 paved the way for development of a classic electron-

ic device which provides the designer the means to ac-

complish nearly every circuit function. At one time, the

field-effect transistor was known as a “unipolar” transis-

tor. The term refers to the fact that current is transported

by carriers of one polarity (majority), whereas in the con-

ventional bipolar transistor carriers of both polarities

(majority and minority) are involved.

Junction FETs

In its most elementary form, this transistor consists of a

piece of high-resistivity semiconductor material (usually

silicon) which constitutes a channel for the majority carri-

er flow. The magnitude of this current is controlled by a

voltage applied to a gate, which is a reverse-biased pn

junction formed along the channel. Implicit in this de-

scription is the fundamental difference between JFET and

bipolar devices: when the JFET junction is reverse-biased

the gate current is practically zero, whereas the base cur-

rent of the bipolar transistor is always some value greater

than zero. The JFET is a high-input resistance device,

while the input resistance of the bipolar transistor is com-

paratively low. If the channel is doped with a donor impu-

rity, n-type material is formed and the channel current

will consist of electrons. If the channel is doped with an

acceptor impurity, p-type material will be formed and the

channel current will consist of holes. N-channel devices

have greater conductivity than p-channel types, since

electrons have higher mobility than do holes; thus n-chan-

nel JFETs are approximately twice as efficient conductors

compared to their p-channel counterparts.

This Application Note provides an insight into the nature of

the FET, and touches briefly on its basic characteristics, ter-

minology, parameters, and typical applications.

The following list of FET applications indicates the ver-

satility of the FET family:

Amplifiers

S Small Signal

S Low Distortion

S High Gain

S Low Noise

S Selectivity

S DC

Switches

S Chopper-Type

S Analog Gate

S Communicator

Protection Diodes

S Low-leakage

S High-Frequency

Current Limiters

Voltage-Controlled Resistors

Mixers

Oscillators

FETs

Junction

MOS

Enhancement

Not Possible

Depletion

Enhancement

Figure 1. FET Family Tree

Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70594.

Siliconix

10-Mar-97

12 3 4 5

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