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AN-1025

更新时间： 2024-10-29 12:20:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	256K
描述
Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs

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AN-1025 数据手册

AN1025

April, 1996

Maximum Power Enhancement Techniques for SuperSOT^TM-3 Power

MOSFETs

Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong

1. Introduction

As packages become smaller, achieving efficient thermal performance for power applications

requires that the designers employ new methods of meliorating the heat flow out of devices.

Thus the purpose of this paper is to aid the user in maximizing the power handling capability of

the SuperSOT^TM-3 (SOT-23) Power MOSFET offered by Fairchild Semiconductor. This effort

allows the user to take full advantage of the exceptional performance features of Fairchild’s

state-of-the-art Power MOSFET which offers very low on-resistance and improved junction-to-

case (R_θJC) thermal resistance. Ultimately the user may achieve improved component perfor-

mance and higher circuit board packing density by using the thermal solution suggested below.

In natural cooling, the method of improving power performance should be focused on the opti-

mum design of copper mounting pads. The design should take into consideration the size of the

copper and its placement on either or both of the board surfaces. A copper mounting pad is

important because the drain lead of the Power MOSFET is mounted directly onto the pad. The

pad acts as a heatsink to reduce thermal resistance and leads to improved power performance.

Figure 1. SuperSOT^TM-3 Power MOSFET has the same package dimensions as the SOT-23 but the

maximized copper lead frame reduces the junction-to-case thermal resistance R_θJCto 75^oC/W.

2. Theory

When a device operates in a system under the steady-state condition, the maximum power

dissipation is determined by the maximum junction temperature rating, the ambient tempera-

ture, and the junction-to-ambient thermal resistance.

P_Dmax= (T_Jmax- T_A)/ R_θJC(2.1)

The term junction refers to the point of thermal reference of the semiconductor. Equation 2.1

can also be applied to the transient-state:

P_Dmax(t) = [ T_Jmax- T_A] / R_θJC(t) (2.2)

Rev B, August 1998

12 3 4 5 6 7...11

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