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AN-1029

更新时间： 2024-10-29 08:30:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
13页	258K
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Maximum Power Enhancement Techniques for SO-8 Power MOSFETs

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AN-1029 数据手册

AN1029

April, 1996

Maximum Power Enhancement Techniques for SO-8 Power MOSFETs

Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong

1. Introduction

As packages become smaller, achieving efficient thermal performance for power applications re-

quires that the designers employ new methods of meliorating the heat flow out of devices. Thus

the purpose of this paper is to aid the user in maximizing the power handling capability of the SO-

8 Power MOSFET offered by Fairchild Semiconductor. This effort allows the user to take full

advantage of the exceptional performance features of Fairchild’s state-of-the-art Power MOSFET

which offers very low on-resistance and improved junction-to-case (R_θJC) thermal resistance. Ulti-

mately the user may achieve improved component performance and higher circuit board packing

density by using the thermal solution suggested below.

In natural cooling, the method of improving power performance should be focused on the optimum

design of copper mounting pads. The design should take into consideration the size of the copper

and its placement on either or both of the board surfaces. A copper mounting pad is important

because the drain leads of the Power MOSFET are mounted directly onto the pad. The pad acts

as a heatsink to reduce thermal resistance and leads to improved power performance.

D₂

D₁

G₂

S₂

S₁

Figure 1. SO-8 Power MOSFET has junction-to-case thermal resistance R_θJCof 25^oC/W for single device

and 40 ^oC/W for dual devices.

2. Theory

When a device operates in a system under the steady-state condition, the maximum power

dissipation is determined by the maximum junction temperature rating, the ambient temperature,

and the junction-to-ambient thermal resistance.

P_Dmax= ( T_Jmax- T_A) / R_θJA(2.1)

The term junction refers to the point of thermal reference of the semiconductor. Equation 2.1 can

also be applied to the transient-state:

Rev B, August 1998

12 3 4 5 6 7...13

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