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AN1016/D

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Infrared Sensing and Data Transmission Fundamentals

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AN1016/D  
Infrared Sensing  
and Data Transmission  
Fundamentals  
Prepared by: Dave Hyder  
ON Semiconductor  
http://onsemi.com  
Field Applications Engineer  
APPLICATION NOTE  
Many applications today benefit greatly from electrical  
isolation of assemblies, require remote control, or need to  
sense a position or presence. Infrared light is an excellent  
solution for these situations due to low cost, ease of use,  
ready availability of components, and freedom from  
licensing requirements or interference concerns that may  
be required by RF techniques. Construction of these  
systems is not difficult, but many designers are not familiar  
with the principles involved. The purpose of this  
application note is to present a “primer” on those  
techniques and thus speed their implementation.  
in the form of the 50 or 60 Hz power frequency. Also, recall  
that the sensitivity of silicon photo detectors extends well  
into the visible range. This sensitivity, albeit reduced,  
causes severe interference since the sources in this region  
are often of significant power, e.g., incandescent lighting  
and sunlight. In addition to the visible component, both  
produce large amounts of infrared energy, especially  
sunlight.  
Some IR applications are not exposed to this  
competition, and for them dc excitation of the source may  
be adequate. These include some position sensing areas  
and slow data links over short distances.  
THE GENERAL PROBLEM  
But the bulk of IR needs require a distance greater than  
30 cm, speeds greater than 300 baud, and exposure to  
interfering elements. For these needs high–frequency  
excitation of the source is necessary. This ac drive permits  
much easier amplification of the detected signal, filtering  
of lower frequency components, and is not difficult to  
produce at the driving end. Optical filtering for removal of  
the visible spectrum is usually required in addition to the  
electrical, but this too is quite simple.  
Figure 1 represents a generalized IR system. The  
transmitting portion presents by far the simplest hurdle. All  
that needs to be accomplished is to drive the light source  
such that sufficient power is launched at the intended  
frequency to produce adequate reception. This is quite easy  
to do, and specific circuits will be presented later.  
LIGHT  
SOURCE  
RECEIVER  
Amplification  
and Filtering  
λ
PROCESSING  
Data Separation  
A WORD ABOUT DETECTORS  
Usually Infrared  
Figure 2 shows the three basic detection schemes: a  
phototransistor, a Darlington phototransistor, and a  
photodiode. All three produce hole–electron pairs in  
response to photons striking a junction. This is seen as a  
current when they are swept across the junction by the bias  
voltage, but they differ greatly in other respects.  
The most sensitive is the Darlington. The penalties are  
temperature drift, very–low tolerance to saturation, and  
speeds, limited to about 5 kHz (usually much less). Next is  
the single transistor, having similar penalties (but to a lesser  
degree), with speeds limited to less than 10 kHz. Typically,  
they are limited to less than half that number. These two  
detectors normally find their use in enclosed environments,  
where ample source intensity is available to provide large  
voltage outputs without much additional circuitry (their  
prime advantage). Their detection area is almost never  
exposed to ambient light.  
Figure 1. Simplified IR Sensing/Data Transmission  
System  
The bulk of the challenge lies in the receiving area, with  
several factors to consider. The ambient light environment  
is a primary concern. Competing with the feeble IR  
transmitted signal are light sources or relatively high  
power, such as local incandescent sources, fluorescent  
lighting, and sunlight. These contribute to the problem in  
two ways. First, they produce an ambient level of  
stimulation to the detector that appears as a dc bias which  
can cause decreased sensitivity and, worst of all, saturation  
in some types of detectors. Second, they provide a noise  
level often 60 dB greater than the desired signal, especially  
This document may contain references to devices which are no  
longer offered. Please contact your ON Semiconductor represen-  
tative for information on possible replacement devices.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
July, 2002 – Rev. 1  
AN1016/D  

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