5秒后页面跳转
捷配首页

Datasheet > AFM906N
AFM906N PDF预览

AFM906N

更新时间： 2024-09-15 15:18:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
17页 849K
描述
Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6.0 W, 7.5 V

阅读下载

中文翻译

获取价格

AFM906N 数据手册

 浏览型号AFM906N的Datasheet PDF文件第2页浏览型号AFM906N的Datasheet PDF文件第3页浏览型号AFM906N的Datasheet PDF文件第4页浏览型号AFM906N的Datasheet PDF文件第5页浏览型号AFM906N的Datasheet PDF文件第6页浏览型号AFM906N的Datasheet PDF文件第7页 
Document Number: AFM906N  
Rev. 2, 11/2018  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
High Ruggedness N--Channel  
Enhancement--Mode Lateral MOSFET  
AFM906N  
Designed for handheld two--way radio applications with frequencies from  
136 to 941 MHz. The high gain, ruggedness and wideband performance of this  
device make it ideal for large--signal, common--source amplifier applications in  
handheld radio equipment.  
136–941 MHz, 6.0 W, 7.5 V  
WIDEBAND  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
Wideband Performance (In 440–520 MHz reference circuit, 7.5 Vdc, T = 25C, CW)  
A
Frequency  
(MHz)  
P
(W)  
G
(dB)  
(%)  
P
out  
(W)  
in  
ps  
D
(1,2)  
440–520  
0.16  
16.2  
62.0  
6.5  
Narrowband Performance (7.5 Vdc, T = 25C, CW)  
A
Frequency  
(MHz)  
G
(B)  
(%)  
P
out  
(W)  
ps  
D
(3)  
520  
20.3  
70.8  
6.8  
Load Mismatch/Ruggedness  
Frequency Signal  
DFN 4 6  
P
Test  
in  
(MHz)  
Type  
VSWR  
(dBm)  
Voltage  
Result  
N.C.  
N.C.  
N.C.  
N.C.  
1
2
16  
15  
(3)  
520  
CW  
> 65:1 at all  
Phase Angles  
21  
10.8  
No Device  
Degradation  
(3 dB Overdrive)  
Drain  
Drain  
Drain  
Gate  
Gate  
Gate  
Gate  
3
4
5
6
14  
13  
12  
1. Measured in 440–520 MHz broadband reference circuit (page 6).  
2. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
3. Measured in 520 MHz narrowband production test fixture (page 9).  
11 Drain  
Features  
10  
7
8
N.C.  
N.C.  
N.C.  
N.C.  
Characterized for operation from 136 to 941 MHz  
Unmatched input and output allowing wide frequency range utilization  
Integrated ESD protection  
Integrated stability enhancements  
Wideband — full power across the band  
Exceptional thermal performance  
9
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
Figure 1. Pin Connections  
Extreme ruggedness  
High linearity for: TETRA, SSB  
Typical Applications  
Output stage VHF band handheld radio  
Output stage UHF band handheld radio  
Output stage for 700–800 MHz handheld radio  
Generic 6 W driver for ISM and broadcast final stage transistors  
2016, 2018 NXP B.V.  
1234567...17

中文翻译

下载PDF

与AFM906N相关器件

型号 品牌 获取价格 描述 数据表
AFM906NT1 NXP

获取价格

 		RF POWER, FET
AFM907N NXP

获取价格

 		Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFM912N NXP

获取价格

 		Airfast RF Power LDMOS Transistor, 12 W CW over 136 to 941 MHz, 7.5 V
AFO2X-XX Narda-ATM

获取价格

 		OUTLINE, AF02X-XX VARIABLE ATTEN., STD. COLLAR
AFOF5S3E-20.000MHZ CONNOR-WINFIELD

获取价格

 		HCMOS Output Clock Oscillator, 20MHz Nom
AFP02N2-00 SKYWORKS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,
AFP02N2-55 SKYWORKS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,
AFP02N2-56 SKYWORKS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,
AFP02N3-000 SKYWORKS

获取价格

 		RF Small Signal Field-Effect Transistor, N-Channel
AFP02N3-104 SKYWORKS

获取价格

 		RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr

与AFM906N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证