General Purpose Packaged PHEMT Chips
AFP02N8-212, AFP02N8-213
213
Features
Drain
Source
■ Low Noise Figure, 1.55 dB @ 4 GHz
■ High Associated Gain, 13 dB @ 4 GHz
■ High MAG, > 15 dB @ 4 GHz
■ 0.7 µm Ti/Pd/Au Gates
Source
Gate
Drain
Source
■ Passivated Surface
Source
Gate
■ Low Cost Metal Ceramic Package
■ Available with Two Lead Lengths
■ Available in Tape and Reel Packaging
212
Absolute Maximum Ratings
Characteristic
Value
6 V
Drain to Source Voltage (V
)
DS
Description
Gate to Source Voltage (V
)
GS
-3 V
The AFP02N8-212, 213 are general purpose packaged
PHEMT chips that have excellent gain and noise
performance through X band, making them suitable for a
wide range of commercial applications. The devices
employ 0.7 µm Ti/Pd/Au gates and surface passivation to
ensure a rugged, reliable part. Available in metal ceramic
packages with a choice of two lead lengths. The
components are also available in tape and reel and are
ready for automatic insertion equipment.
Drain Current (I
)
I
DSS
DS
Gate Current (I
)
10 µA
300 mW
GS
Total Power Dissipation (P )
T
Storage Temperature (T
)
-65 to +150°C
175°C
ST
Channel Temperature (T
)
CH
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
Transconductance (gm)
Test Conditions
Min.
25.0
30.0
-0.4
-6.0
Typ.
55.0
45.0
-1.2
8.0
Max.
Unit
mA
mS
V
)
V
V
V
= 2 V, V = 0 V
90.0
DSS
DS
DS
DS
GS
= 2 V, I = 15 mA
DS
Pinch-off Voltage (V )
= 2 V, I = 0.3 mA
-2.0
P
DS
Gate to Source
I
= -200 µA
V
GS
Breakdown Voltage (V
)
bgs
Noise Figure (NF)
1.55
13.2
2.0
dB
dB
V
= 2 V, I = 15 mA, F = 4 GHz
DS
DS
Associated Gain (G )
12.0
A
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 6/99A