Datasheet > AFP02N3-213

AFP02N3-213

更新时间： 2024-09-15 14:24:03

品牌	Logo	应用领域
思佳讯 - SKYWORKS		/
页数	文件大小	规格书
4页	32K
描述
RF Small Signal Field-Effect Transistor, N-Channel

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中文翻译

获取价格

技术参数
数据手册

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AFP02N3-213 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	0.09 A	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	功耗环境最大值：	0.2 W
子类别：	FET RF Small Signal	Base Number Matches：	1

AFP02N3-213 数据手册

Low Noise Packaged PHEMT Chips

AFP02N3-212, AFP02N3-213

213

Features

Drain

Source

■ Low Noise Figure, 0.75 dB @ 12 GHz

■ High Associated Gain, 9.5 dB @ 12 GHz

■ High MAG, > 10.0 dB @ 12 GHz

■ 0.25 µm Ti/Pd/Au gates

Source

Gate

Drain

Source

■ Passivated Surface

Source

Gate

■ Low Cost Metal Ceramic Package

■ Available with Two Lead Lengths

212

Absolute Maximum Ratings

■ Available in Tape and Reel Packaging

Characteristic

Value

4 V

Drain to Source Voltage (V

)

Description

Gate to Source Voltage (V

)

-2 V

The AFP02N3-212, 213 are low noise packaged PHEMT

chips. They have excellent gain and noise performance

through Ku band, making them suitable for a wide range

of commercial applications. These devices employ 0.25

µm Ti/Pd/Au “mushroom” gates and surface passivation

to ensure a rugged, reliable part. They are available in a

metal ceramic package with a choice of two lead lengths.

The components are also available in tape and reel and

are ready for automatic insertion equipment.

Drain Current (I

)

DSS

Gate Current (I

)

10 µA

200 mW

Total Power Dissipation (P )

Storage Temperature (T

)

-65 to +150°C

175°C

Channel Temperature (T

)

Electrical Specifications at 25°C

Parameter

Saturated Drain Current (I

Transconductance (gm)

Test Conditions

Min.

25.0

40.0

-0.2

-4.0

Typ.

55.0

-1.0

-6.0

Max.

Unit

)

= 2 V, V = 0 V

90.0

DSS

= 2 V, I = 15 mA

Pinch-off Voltage (V )

= 2 V, I = 0.3 mA

-2.0

Gate to Source

= -200 µA

Breakdown Voltage (V

)

bgs

Noise Figure (NF)

0.4

15.0

0.75

9.5

0.5

= 2 V, I = 15 mA, F = 4 GHz

Associated Gain (G )

15.5

8.5

Noise Figure (NF)

0.95

= 2 V, I = 15 mA, F = 12 GHz

Associated Gain (G )

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 6/99A

12 3 4

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