Datasheet > AFP02N8-000

AFP02N8-000

更新时间： 2024-09-14 22:05:27

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管
页数	文件大小	规格书
4页	27K
描述
General Purpose PHEMT Chip

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数据手册

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AFP02N8-000 数据手册

General Purpose PHEMT Chip

AFP02N8-000

Features

■ Low Noise Figure, 1.25 dB @ 4 GHz

■ High Associated Gain, 15.0 dB @ 4 GHz

■ High MAG, > 18 dB @ 4 GHz

■ 0.7 µm Ti/Pd/Au Gates

350

125

■ Passivated Surface

Description

The AFP02N8-000 general purpose PHEMT chip has

excellent gain and noise performance through X band,

making it suitable for a wide range of commercial and military

applications.The device employs 0.7 µm Ti/Pd/Au gates and

surface passivation to ensure a rugged, reliable part.

400

Absolute Maximum Ratings

Characteristic

Value

6 V

Drain to Source Voltage (V

)

Gate to Source Voltage (V

)

-3 V

Drain Current (I

)

DSS

Gate Current (I

)

10 µA

300 mW

Total Power Dissipation (P )

Storage Temperature (T

)

-65 to +150°C

175°C

Channel Temperature (T

)

Electrical Specifications at 25°C

Parameter

Saturated Drain Current (I

Transconductance (gm)

Test Conditions

Min.

25.0

40.0

-0.2

-4.0

Typ.

45.0

55.0

-0.6

-6.0

Max.

Unit

)

= 2 V, V = 0 V

90.0

DSS

= 2 V, I = 15 mA

Pinch-off Voltage (V )

= 2 V, I = 0.3 mA

-2.0

Gate to Source

= -200 µA

Breakdown Voltage (V

)

bgs

Noise Figure (NF)

1.25

15.0

2.6

1.75

3.0

= 2 V, I = 15 mA, F = 4 GHz

Associated Gain (G )

14.0

8.5

Noise Figure (NF)

= 2 V, I = 15 mA, F = 12 GHz

Associated Gain (G )

9.4

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 6/99A

12 3 4

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