Datasheet > AFP02N3-000

AFP02N3-000

更新时间： 2024-09-15 21:08:59

品牌	Logo	应用领域
思佳讯 - SKYWORKS		/
页数	文件大小	规格书
4页	31K
描述
RF Small Signal Field-Effect Transistor, N-Channel

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AFP02N3-000 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	0.09 A	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	功耗环境最大值：	0.2 W
子类别：	FET RF Small Signal	Base Number Matches：	1

AFP02N3-000 数据手册

Low Noise PHEMT Chip

AFP02N3-000

Features

■ Low Noise Figure, 0.70 dB @ 12 GHz

■ High Associated Gain, 10.0 dB @ 12 GHz

■ High MAG, >12.5 dB @ 12 GHz

■ 0.25 µm Ti/Pd/Au Gates

■ Passivated Surface

100

200

300

400

500

600

Description

1 cm = 38.7 µm

The AFP02N3-000 low noise PHEMT chip has excellent

gain and noise performance through K band, making it

suitable for a wide range of commercial and military

applications.The device employs 0.25 µm Ti/Pd/Au gates

and surface passivation to ensure a rugged, reliable part.

Absolute Maximum Ratings

Characteristic

Value

Drain to Source Voltage (V

)

4 V

Gate to Source Voltage (V

)

-2 V

Drain Current (I

)

DSS

Gate Current (I

)

10 µA

200 mW

Total Power Dissipation (P )

Storage Temperature (T

)

-65 to +150°C

175°C

Channel Temperature (T

)

Electrical Specifications at 25°C

Parameter

Saturated Drain Current (I

Transconductance (gm)

Test Conditions

Min.

25.0

40.0

-0.2

-4.0

Typ.

55.0

-1.0

-6.0

Max.

Unit

)

= 2 V, V = 0 V

90.0

DSS

= 2 V, I = 15 mA

Pinch-off Voltage (V )

= 2 V, I = 0.3 mA

-2.0

Gate to Source

= -200 µA

Breakdown Voltage (V

)

bgs

Noise Figure (NF)

0.35

0.7

= 2 V, I = 15 mA, F = 4 GHz

Associated Gain (G )

15.5

9.5

16.5

0.7

Noise Figure (NF)

0.95

= 2 V, I = 15 mA, F = 12 GHz

Associated Gain (G )

10.5

12.0

Output Power at 1 dB

= 3 V, I = 30 mA

dBm

Compression (P

)

1 dB

Thermal Resistance (Θ

)

Channel to Infinite Heat Sink

260.0

°C/W

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 6/99A

12 3 4

中文翻译

下载PDF

与AFP02N3-000相关器件

型号	品牌	获取价格	描述	数据表
AFP02N3-104	SKYWORKS	获取价格	RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr
AFP02N3-212	SKYWORKS	获取价格	RF Small Signal Field-Effect Transistor, N-Channel
AFP02N3-213	SKYWORKS	获取价格	RF Small Signal Field-Effect Transistor, N-Channel
AFP02N8-000	ALPHA	获取价格	General Purpose PHEMT Chip
AFP02N8-212	ALPHA	获取价格	General Purpose Packaged PHEMT Chips
AFP02N8-212	SKYWORKS	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
AFP02N8-213	ALPHA	获取价格	General Purpose Packaged PHEMT Chips
AFP30U60AB	JSMC	获取价格	TO-247
AFP450V104K	OKAYA	获取价格	FOR ACTIVE FILTER CIRCUIT
AFP450V104K_14	OKAYA	获取价格	PFC CAPACITOR