Datasheet > AFM912N

AFM912N

更新时间： 2024-09-15 17:01:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	190K
描述
Airfast RF Power LDMOS Transistor, 12 W CW over 136 to 941 MHz, 7.5 V

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AFM912N 数据手册

AFM912N

Airfast RF Power LDMOS Transistor

Rev. 0 — November 2022

Data Sheet: Technical Data

Designed for handheld two−way radio applications with frequencies from

136 to 941 MHz. The high gain, ruggedness and wideband performance of this

device make it ideal for large−signal, common−source amplifier applications in

handheld radio equipment.

AFM912N

Typical Performance (7.5 Vdc, T = 25°C, CW)

Frequency

(MHz)

Gain

Compression

out

(W)

12.5

15.7

(dB)

13.3

11.3

(%)

65.2

69.5

136–941 MHz, 12 W, 7.5 V

WIDEBAND

941

P1dB

P3dB

AIRFAST RF POWER LDMOS

TRANSISTOR

Load Mismatch/Ruggedness

Frequency Signal

Test

(MHz)

Type

VSWR

(dBm)

Voltage

Result

941

> 10:1 at all

32.9

10.0

No Device

Phase Angles

(3 dB Overdrive)

Degradation

Features

• Characterized for operation from 136 to 941 MHz

DFN 4 ꢀ 6

• Unmatched input and output allowing wide frequency range utilization

• Device can be used single−ended or in a push−pull configuration

• Integrated ESD protection

• Integrated stability enhancements

• Wideband — full power across each band

• Extreme ruggedness

N.C.

16 N.C.

Gate A

15 Drain A

Gate A

Gate B

14 Drain A

13 Drain A

12 Drain B

11 Drain B

10 Drain B

• High linearity for: TETRA, SSB

Typical Applications

• Output stage VHF band handheld radio

• Output stage UHF band handheld radio

• Output stage for 700–800 MHz handheld radio

Gate B

N.C.

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

This document contains information on a preproduction product. Specifications and

information herein are subject to chang without notice.

NXP reserves the right to change the detail specifications as may be required to permit

improvements in the design of its products.

12 3 4 5 6 7...13

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