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2SK369-BL PDF预览

2SK369-BL

更新时间: 2024-11-16 12:54:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体音频放大器小信号场效应晶体管
页数 文件大小 规格书
5页 358K
描述
For Low Noise Audio Amplifier Applications

2SK369-BL 技术参数

生命周期:Transferred零件包装代码:TO-92
包装说明:2-5F1D, SC-43, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.27
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:40 V最大漏极电流 (ID):0.016 A
FET 技术:JUNCTIONJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK369-BL 数据手册

 浏览型号2SK369-BL的Datasheet PDF文件第2页浏览型号2SK369-BL的Datasheet PDF文件第3页浏览型号2SK369-BL的Datasheet PDF文件第4页浏览型号2SK369-BL的Datasheet PDF文件第5页 
2SK369  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK369  
For Low Noise Audio Amplifier Applications  
Unit: mm  
Suitable for use as first stage for equalizer and MC head amplifiers.  
High |Y |: |Y | = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA)  
fs  
fs  
DS  
GS  
DSS  
High breakdown voltage: V  
= 40 V (min)  
GDS  
Super low noise: NF = 1.0dB (typ.)  
(V  
DS  
= 10 V, I = 5 mA, f = 1 kHz, R = 100 )  
D
G
High input impedance: I  
= 1 nA (max) (V  
= 30 V)  
GSS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
40  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
400  
D
T
j
125  
T
stg  
55~125  
°C  
JEDEC  
JEITA  
TO-92  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-43  
TOSHIBA  
2-5F1D  
Weight: 0.21 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= −30 V, V  
= 0  
1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0, I = −100 μA  
40  
(BR) GDS  
G
I
DSS  
Drain current  
V
= 10 V, V  
= 0  
5.0  
30  
mA  
DS  
DS  
GS  
(Note 1)  
Gate-source cut-off voltage  
Forward transfer admittance  
V
V
V
= 10 V, I = 0.1 μA  
0.3  
1.2  
V
GS (OFF)  
D
= 10 V, V  
= 5 mA)  
= 0, f = 1 kHz,  
= 0, f = 1 MHz  
DS  
GS  
Y ⎪  
fs  
25  
40  
mS  
(I  
DSS  
Input capacitance  
C
V
V
V
= 10 V, V  
75  
15  
pF  
pF  
iss  
DS  
GD  
DS  
GS  
Reverse transfer capacitance  
C
= −10 V, I = 0, f = 1 MHz  
D
rss  
= 10 V, R = 100 Ω, I = 5 mA,  
G
D
NF (1)  
NF (2)  
5
1
10  
2
f = 100 Hz  
Noise figure  
(Note 2)  
dB  
V
= 10 V, R = 100 Ω, I = 5 mA,  
DS  
f = 1 kHz  
G
D
Note 1:  
I
classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA  
DSS  
Note 2: Use this in the low voltage region (VDS < 15 V) for low noise applications.  
1
2007-11-01  

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