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2SK3703 PDF预览

2SK3703

更新时间: 2024-11-07 07:32:35
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲通用开关局域网
页数 文件大小 规格书
4页 39K
描述
General-Purpose Switching Device Applications

2SK3703 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.34
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3703 数据手册

 浏览型号2SK3703的Datasheet PDF文件第2页浏览型号2SK3703的Datasheet PDF文件第3页浏览型号2SK3703的Datasheet PDF文件第4页 
Ordering number : ENN7681  
N-Channl Silicon MOSFET  
2SK3703  
General-Purpose Switching Device Applications  
Features  
Package Dimensions  
Low ON-resistance.  
unit : mm  
2063A  
4V drive.  
Ultrahigh-speed switching.  
[2SK3703]  
Motor drive, DC / DC converter.  
4.5  
10.0  
2.8  
3.2  
2.4  
1.6  
1.2  
0.7  
0.75  
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
2.55  
2.55  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
2.55  
2.55  
SANYO : TO-220ML  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
60  
±20  
30  
V
V
DSS  
GSS  
V
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
120  
2.0  
25  
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
60  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=60V, V =0  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
1.2  
13  
2.6  
D
Forward Transfer Admittance  
Marking : K3703  
yfs  
=10V, I =15A  
22  
S
D
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
61504 TS IM TA-100813 No.7681-1/4  

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