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2SK3702JS

更新时间： 2024-11-16 04:26:31
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲通用开关局域网
页数 文件大小 规格书
5页 53K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device

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2SK3702JS 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.34Is Samacsys：N
雪崩能效等级（Eas）：23 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：18 A最大漏极电流 (ID)：18 A
最大漏源导通电阻：0.085 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：20 W最大脉冲漏极电流 (IDM)：72 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK3702JS 数据手册

 浏览型号2SK3702JS的Datasheet PDF文件第2页浏览型号2SK3702JS的Datasheet PDF文件第3页浏览型号2SK3702JS的Datasheet PDF文件第4页浏览型号2SK3702JS的Datasheet PDF文件第5页 
Ordering number : ENA0632  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3702JS  
Features  
• Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
Avalanche resistance guarantee.  
•
Pb-free type.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
18  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
72  
A
DP  
2.0  
20  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
23  
18  
AS  
I
AV  
Note : *1 V =20V, L=100µH, I =18A  
DD  
AV  
*2 L≤100µH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=1mA, V =0V  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
60  
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=60V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0V  
DS  
±10  
V (off)  
GS  
=10V, I =1mA  
1.2  
8
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =9A  
12  
S
D
R
(on)1  
I
=9A, V =10V  
GS  
42  
60  
55  
85  
mΩ  
mΩ  
DS  
D
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
=9A, V =4V  
GS  
Marking : K3702  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before using any SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D1306QA TI IM TC-00000378 No. A0632-1/5  
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