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2SK370_07

更新时间： 2024-11-16 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
5页 655K
描述
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

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2SK370_07 数据手册

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2SK370  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK370  
For Low Noise Audio Amplifier Applications  
Unit: mm  
•
•
•
•
•
•
Suitable for use as first stage for equalizer and MC head amplifiers.  
High |Y |: |Y | = 22 ms (typ.) (V  
= 10 V, V  
= 0, I = 3 mA)  
DSS  
fs  
fs  
DS  
GS  
High breakdown voltage: V  
= −40 V  
GDS  
High input impedance: I  
= −1 nA (max) (V  
= −30 V)  
GSS  
GS  
Complementary to 2SJ108  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−40  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
200  
D
T
j
125  
T
stg  
−55~125  
°C  
JEDEC  
JEITA  
―
―
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-4E1C  
Weight: 0.13 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= −30 V, V  
= 0  
⎯
⎯
⎯
−1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0, I = −100 μA  
−40  
⎯
(BR) GDS  
G
I
DSS  
(Note)  
Drain current  
V
= 10 V, V  
= 0  
2.6  
⎯
20  
mA  
DS  
DS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
V
V
V
= 10 V, I = 0.1 μA  
−0.2  
⎯
−1.5  
V
GS (OFF)  
D
= 10 V, V  
= 3 mA  
= 0, f = 1 kHz,  
= 0, f = 1 MHz  
DS  
GS  
⎪Y ⎪  
fs  
8
22  
⎯
mS  
I
DSS  
Input capacitance  
C
V
V
V
= 10 V, V  
⎯
⎯
30  
6
⎯
⎯
pF  
pF  
iss  
DS  
DG  
DS  
GS  
Reverse transfer capacitance  
C
= 10 V, I = 0, f = 1 MHz  
D
rss  
= 10 V, I = 1.0 mA, R = 1 kΩ,  
D
G
NF (1)  
NF (2)  
⎯
⎯
1.0  
0.5  
10  
2
f = 10 Hz  
Noise figure  
dB  
V
= 10 V, I = 1.0 mA, R = 1 kΩ,  
DS  
f = 1 kHz  
D
G
Note: I  
classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA  
DSS  
1
2007-11-01  
12345

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