Datasheet > 2SK371_07

2SK371_07

更新时间： 2024-09-17 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		音频放大器
页数	文件大小	规格书
5页	758K
描述
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

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2SK371_07 数据手册

2SK371

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK371

For Low Noise Audio Amplifier Applications

Unit: mm

•

Suitable for use as first stage for equalizer and MC head amplifiers.

High |Y |: |Y | = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA)

DSS

High breakdown voltage: V

= −40 V

GDS

Super low noise: NF = 1.0dB (typ.)

= 10 V, I = 0.5 mA, f = 1 kHz, R = 100 Ω)

•

High input impedance: I

Small package

= −1 nA (max) (V

= −30 V)

GSS

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−40

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

200

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−40

⎯

(BR) GDS

DSS

Drain current

= 10 V, V

= 0

5.0

⎯

(Note 1)

Gate-source cut-off voltage

Forward transfer admittance

= 10 V, I = 0.1 μA

−0.3

⎯

−1.2

GS (OFF)

= 10 V, V

= 0, f = 1 kHz,

= 5 mA)

⎪Y ⎪

⎯

(typ.: I

DSS

Input capacitance

= 10 V, V

= 0, f = 1 MHz

⎯

iss

Reverse transfer capacitance

= 10 V, I = 0, f = 1 MHz

rss

= 10 V, R = 100 Ω, I = 5 mA,

NF (1)

NF (2)

⎯

f = 100 Hz

Noise figure

(Note 2)

= 10 V, R = 100 Ω, I = 5 mA,

f = 1 kHz

Note 1:

classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA

DSS

Note 2: Use this in the low voltage region (V

< 15 V) for low noise applications.

2007-11-01

12 3 4 5

中文翻译

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