Datasheet > 2SK3711_07

2SK3711_07

更新时间： 2024-09-17 07:32:39

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
9页	309K
描述
Low on-resistance

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中文翻译

获取价格

数据手册

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2SK3711_07 数据手册

60V N -ch MOSFET

2SK3711

December 2005

■Package—TO3P

■Features

• Low on-resistance

• Built-in gate protection diode

• Avalanche energy capability guaranteed

■Applications

• Electric power steering

• High current switching

■Equivalent circuit

D (2)

G (1)

S (3)

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

VDSS

VGSS

Rating

Unit

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

Pulsed Drain Current

±20

±70A

ID (pulse) ^*1

±140A

130 (Tc=25°C)

Maximum Power Dissipation

Single Pulse Avalanche Energy

Channel Temperature

EAS ^*2

468

Tch

150

°C

Storage Temperature

Tstg

-55 to 150

*1 PW≤100μs, duty cycle≤1%

*2 VDD=20V, L=1mH, ILp=25A, unclamped, RG=50Ω. See Fig.1

Sanken Electric Co.,Ltd.

http://www.sanken-ele.co.jp/en/

T02-002EA-051124

1/9

12 3 4 5 6 7...9

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