2SK3714-AZ

更新时间： 2024-11-09 13:00:27

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲局域网
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8页	85K
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中文翻译

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数据手册

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2SK3714-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3714

SWITCHING

N-CHANNEL POWER MOS FET

ORDERING INFORMATION

DESCRIPTION

The 2SK3714 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PART NUMBER

2SK3714

PACKAGE

Isolated TO-220

FEATURES

• Super low on-state resistance

R^DS(on)1= 13 mΩ MAX. (VGS = 10 V, ID = 25 A)

R^DS(on)2= 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A)

• Low C^iss: Ciss = 3200 pF TYP.

• Built-in gate protection diode

(Isolated TO-220)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

VDSS

VGSS

ID(DC)

ID(pulse)

P^T1

±20

±50

±160

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

°C

P^T2

2.0

T^ch

150

−55 to +150

Storage Temperature

T^stg

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

I^AS

E^AS

2. Starting T^ch= 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16537EJ2V0DS00 (2nd edition)

Date Published August 2003 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2003

12 3 4 5 6 7 8

中文翻译

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