Datasheet > 2SK3713

2SK3713

更新时间： 2024-11-09 06:23:15

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描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3713 数据手册

SMD Type

MOSFET

MOS Field Effect Transistor

2SK3713

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

Super high VGS(off): VGS(off) = 3.8 to 5.8 V

Low Crss: Crss = 6.5 pF TYP.

Low QG: QG = 25 nC TYP.

+0.1

-0.1

0.1max

1.27

Low on-state resistance:

+0.1

0.81

-0.1

R^DS(on)= 0.83

MAX. (VGS = 10 V, ID = 5 A)

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

600

Unit

Gate to source voltage

Drain current

I^dp*

1.5

Power dissipation

TA=25

T^C=25

P^D

100

150

Channel temperature

Storage temperature

T^ch

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Symbol

I^DSS

Testconditons

VDS=600V,VGS=0

Min

Typ

Max

Unit

Drain cut-off current

Gate leakage current

I^GSS

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=5A

VGS=10V,ID=5A

100

5.8

Gate cut off voltage

V^GS(off)

3.8

2.5

4.8

4.6

Forward transfer admittance

Drain to source on-state resistance

Yfs

R^DS(on)

0.68 0.83

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^on

1460

250

6.5

V^DS=10V,VGS=0,f=1MHZ

t^r

8.5

I^D=5A,VGS(on)=10V,RG=0 ,VDD=150V

Turn-off delay time

Fall time

t^off

5.2

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

Q^GS

Q^GD

V^DD= 450V

V^GS= 10 V

I^D=10A

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