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2SK3703_12 PDF预览

2SK3703_12

更新时间: 2024-11-07 12:23:51
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 92K
描述
General-Purpose Switching Device Applications

2SK3703_12 数据手册

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Ordering number : EN7681B  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3703  
Features  
ON-resistance R (on)1=20m (typ.)  
4V drive  
Input capacitance Ciss=1780pF (typ.)  
Ω
DS  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
DSS  
V
±20  
V
GSS  
I
30  
A
D
Drain Current (Pulse)  
I
DP  
PW 10 s, duty cycle 1%  
120  
A
μ
2.0  
W
W
Allowable Power Dissipation  
P
D
Tc=25 C  
25  
150  
°
Channel Temperature  
Tch  
C
C
°
Storage Temperature  
Tstg  
--55 to +150  
135  
°
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
mJ  
A
AS  
I
AV  
30  
Note : 1 V =20V, L=200 H, I =30A (Fig.1)  
*
*
μ
DD  
2 L 200 H, Single pulse  
AV  
μ
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: TO-220F-3SG  
7529-001  
• JEITA, JEDEC  
: SC-67  
Minimum Packing Quantity : 50 pcs./magazine  
4.7  
10.16  
3.18  
2SK3703-1E  
2.54  
Marking  
Electrical Connection  
2
A
K3703  
1
LOT No.  
2.76  
1.47 MAX  
0.8  
3
DETAIL-A  
(0.84)  
1
2
3
0.5  
1 : Gate  
2 : Drain  
3 : Source  
FRAME  
EMC  
2.54  
2.54  
SANYO : TO-220F-3SG  
http://semicon.sanyo.com/en/network  
51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813  
No.7681-1/7  

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