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2SK3703_06

更新时间： 2024-11-09 07:32:35
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三洋 - SANYO 开关通用开关
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5页 53K
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General-Purpose Switching Device Applications

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2SK3703_06 数据手册

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Ordering number : EN7681A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK3703  
Features  
• Low ON-resistance.  
•
4V drive.  
•
Ultrahigh-speed switching.  
•
Motor drive, DC / DC converter.  
•
Avalanche resistance guarantee.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
60  
±20  
30  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
120  
2.0  
25  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
135  
30  
AS  
I
AV  
Note : *1 V =20V, L=200µH, I =30A  
DD  
AV  
*2 L≤200µH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=1mA, V =0V  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
60  
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=60V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0V  
DS  
±10  
V (off)  
GS  
=10V, I =1mA  
1.2  
13  
2.6  
D
Forward Transfer Admittance  
yfs  
=10V, I =15A  
22  
S
D
R
(on)1  
I
=15A, V =10V  
GS  
20  
28  
26  
40  
mΩ  
mΩ  
DS  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
D
=15A, V =4V  
GS  
Marking : K3703  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
72506QA MS IM TC-00000067 / 61504 TS IM TA-100813 No.7681-1/5  
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