是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 30 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 36 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3365(0)-Z-E2-AZ | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,30A I(D),TO-252AA | |
2SK3365-AZ | NEC |
获取价格 |
暂无描述 | |
2SK3365-Z | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3365-Z | RENESAS |
获取价格 |
30000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA, TO-252, MP-3Z, 3 PIN | |
2SK3365-Z-AZ | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
2SK3365-Z-E1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,30A I(D),TO-252AA | |
2SK3365-Z-E2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,30A I(D),TO-252AA | |
2SK3366 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3366 | KEXIN |
获取价格 |
MOS Field Effect Transistor | |
2SK3366 | TYSEMI |
获取价格 |
Super low on-state resistance: RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 10 A) |