生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.32 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.03 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3274L | RENESAS |
获取价格 |
Slilicon N Channel MOS FET High Speed Power Switching | |
2SK3274L-E | RENESAS |
获取价格 |
Nch Single Power MOSFET 30V 30A 13mohm DPAK(L)-(2)/TO-251 | |
2SK3274S | TYSEMI |
获取价格 |
Low on-resistance RDS(on) = 10 m typ. 4.5 V gate drive device High speed switching | |
2SK3274S | RENESAS |
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Slilicon N Channel MOS FET High Speed Power Switching | |
2SK3274S | KEXIN |
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Slilicon N Channel MOSFET | |
2SK3274STL-E | RENESAS |
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30A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, SC-63, DPAK-3 | |
2SK3274STR-E | RENESAS |
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Nch Single Power MOSFET 30V 30A 13mohm DPAK(S)/TO-252 | |
2SK3277 | ETC |
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パワーデバイス - パワーMOS FET | |
2SK3278 | SANYO |
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DC/DC Converter Applications | |
2SK3279 | SANYO |
获取价格 |
DC / DC ?R???o?[?^?p |