Datasheet > 2SK3274S

2SK3274S

更新时间： 2024-11-20 12:53:23

品牌	Logo	应用领域
TYSEMI		驱动器开关
页数	文件大小	规格书
1页	148K
描述
Low on-resistance RDS(on) = 10 m typ. 4.5 V gate drive device High speed switching

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中文翻译

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数据手册

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2SK3274S 数据手册

TraMnOsiSstFIIoCCErsT

Product specification

2SK3274S

TO-252

Unit: mm

Features

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low on-resistance

R^DS(on)= 10 m typ.

4.5 V gate drive device

High speed switching

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

P^D

120

Power dissipation

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

T^ch

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

I^DSS

Testconditons

I^D=10mA,V^GS=0

Min

Typ

Max

Unit

Drain source surrender voltage

Drain cut-off current

V^DS=30V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=15A

V^GS=10V,I^D=15A

V^GS=4.5V,I^D=15A

Gate leakage current

Gat cutoff voltage

I^GSS

V^GS(off)

Y^fs

1.5

3.0

Forward transfer admittance

Drain to source on-state resistance

R^DS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^on

t^r

1500

500

250

V^DS=10V,V^GS=0,f=1MHZ

170

110

145

I^D=15A,V^GS(on)=10V,RL=2

Turn-off delay time

Fall time

t^off

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