Datasheet > 2SK2998_10

2SK2998_10

更新时间： 2024-11-12 07:32:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器
页数	文件大小	规格书
6页	376K
描述
Chopper Regulator, DC−DC Converter Applications

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中文翻译

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数据手册

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2SK2998_10 数据手册

2SK2998

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2998

Chopper Regulator, DC−DC Converter Applications

Unit: mm

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 11.5 Ω (typ.)

DS (ON)

: |Y | = 0.4 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±30

GSS

DC (Note 1)

Pulse (Note 1)

0.5

Drain current

1.5

Drain power dissipation

Channel temperature

0.9

°C

stg

150

Storage temperature range

−55 to 150

JEDEC

JEITA

TO-92MOD

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

—

TOSHIBA

2-5J1C

Weight: 0.36 g (typ.)

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability

test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Thermal resistance, channel to ambient

Symbol

Max

138

Unit

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2010-04-06

12 3 4 5 6

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