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2SK3004 PDF预览

2SK3004

更新时间: 2024-09-24 06:23:51
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
2页 46K
描述
External dimensions

2SK3004 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.35
其他特性:UL APPROVED雪崩能效等级(Eas):120 mJ
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:250 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):72 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2SK3004 数据手册

 浏览型号2SK3004的Datasheet PDF文件第2页 
2SK3004  
Absolute Maximum Ratings  
External dimensions  
1 ...... FM20  
Electrical Characteristics  
(Ta = 25ºC)  
(Ta = 25ºC)  
Ratings  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
250  
max  
V
V
nA  
µA  
V
ID = 100µA, VGS = 0V  
VGS = ±20V  
(BR)DSS  
IGSS  
IDSS  
VTH  
VDSS  
VGSS  
ID  
250  
V
V
±100  
100  
4.0  
±20  
±18  
VDS = 250V, VGS = 0V  
VDS = 10V, ID = 1mA  
VDS = 10V, ID = 9A  
VGS = 10V, ID = 9A  
A
2.0  
7
1
ID (pulse)  
±72  
A
*
Re (yfs)  
RDS (on)  
Ciss  
Coss  
Crss  
td (on)  
tr  
11  
200  
850  
550  
250  
20  
S
PD  
35 (Tc = 25ºC)  
120  
W
mJ  
A
250  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
2
EAS  
IAS  
*
VDS = 10V, f = 1.0MHz,  
VGS = 0V  
18  
Tch  
Tstg  
150  
ºC  
ºC  
ID = 9A, VDD 100V,  
RL = 11.1, VGS = 10V,  
See Figure 2 on Page 5.  
55 to +150  
50  
td (off)  
tf  
65  
1: P  
100µs, duty cycle 1%  
W
*
2: V = 25V, L = 670µH, I = 18A, unclamped, R = 50,  
DD  
L
G
80  
*
See Figure 1 on Page 5.  
VSD  
1.0  
700  
1.5  
ISD = 18A, VGS = 0V  
trr  
ns  
ISD = ±100mA  
ID VDS Characteristics (typical)  
ID VGS Characteristics (typical)  
RDS (ON) ID Characteristics (typical)  
0.30  
20  
18  
VDS =10V  
5.5V  
10V  
VGS =10V  
15  
0.25  
0.20  
15  
10  
5V  
10  
0.15  
0.10  
0.05  
0
TC =125°C  
4.5V  
5
5
0
V
GS = 4V  
25°C  
55°C  
0
0
5
10  
15  
20  
0
2
4
6
8
0
5
10  
ID (A)  
15  
18  
VGS (V)  
VDS (V)  
Re (yfs) ID Characteristics (typical)  
VDS VGS Characteristics (typical)  
RDS (ON) TC Characteristics (typical)  
10  
0.5  
20  
VDS =10V  
ID =9A  
VGS =10V  
TC = 55°C  
10  
25°C  
8
6
0.4  
0.3  
0.2  
0.1  
0
125°C  
5
ID =18A  
4
1
ID =9A  
2
0
0.5  
0.3  
0.05 0.1  
0.5  
1
5
10 18  
150  
3
5
10  
20  
50  
0
50  
100  
ID (A)  
VGS (V)  
Tc (ºC)  
Capacitance VDS Characteristics (typical)  
IDR VSD Characteristics (typical)  
Safe Operating Area  
100  
P
D Ta Characteristics  
40  
(Tc = 25ºC)  
3000  
18  
VGS = 0V  
50  
ID(pulse)max  
ID max  
f =1MHz  
15  
10  
1000  
Ciss  
30  
20  
10  
10  
5
500  
Coss  
1
0.5  
100  
50  
5
0
0.1  
0.05  
Crss  
Without heatsink  
0
10  
0.01  
0
10  
20  
30  
40  
50  
0
0.5  
1.0  
1.5  
0
50  
100  
Ta (ºC)  
150  
0.5  
1
5
10  
50 100  
500  
VDS (V)  
VDS (V)  
VSD (V)  
46  

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