是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.37 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 18 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 35 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK300-3 | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK300-3/4 | SONY |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK3004 | ALLEGRO |
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Power Field-Effect Transistor, TO-220AB, TO-220F, FM20, 3 PIN | |
2SK3004 | SANKEN |
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External dimensions | |
2SK300-4 | SONY |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2SK3009 | SHINDENGEN |
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VX-2 Series Power MOSFET(600V 8A) | |
2SK301 | PANASONIC |
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SI N CHANNEL JUCTION | |
2SK3012 | SHINDENGEN |
获取价格 |
VX-2 Series Power MOSFET(600V 12A) | |
2SK3012DSE | KEXIN |
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N-Channel MOSFET | |
2SK3013 | SHINDENGEN |
获取价格 |
VX-2 Series Power MOSFET(600V 16A) |