Datasheet > 2SK3018

2SK3018

更新时间： 2024-11-12 07:32:27

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
页数	文件大小	规格书
4页	974K
描述
N-Channel Enhancement Mode MOSFET

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2SK3018 数据手册

2SK3018

N-Channel Enhancement Mode MOSFET

• Features

• External dimensions

1) Low on-resistance.

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this

device ideal for portable equipment.

4) Easily designed drive circuits.

5) Easy to parallel.

③

②

③

①

②

• Applications

Interfacing, switching (30V, 100mA)

Units:mm

• Structure

Silicon N-channel

MOSFET

SOT-323

SOT-23

①. Gate ②. Source ③. Drain

• Absolute maximum ratings (Ta = 25°C)

• Equivalent circuit

Drain

Parameter

Drain-source voltage

Limits

Unit

Symbol

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

100

°C

Drain current

200

I_DP*1

I_DR

Gate

Continuous

Pulsed

100

Reverse

current

drain

200

I_DRP*1

P_D*2

Tch

Total power dissipation(Tc=25°C)

200

*Gate

Protection

Diode

Channel temperature

150

Source

Storage temperature

Tstg

-55~+150

°C

*1Pw≤10µs,Duty Cycle≤50%

*2With each pin mounted on the recommended lands

*A protection diode is included between the

gate and the source terminals to protect the

diode against static electricity when the product

is in use. Use a protection circuit when the fixed

voltages are exceeded.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3 4

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