Datasheet > 2SK3019A

2SK3019A

更新时间： 2023-12-06 20:03:10

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2360K
描述
SOT-523

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数据手册

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2SK3019A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate MOSFETS

2SK3019A N-channel MOSFET

V_(BR)DSSR_DS(on)TYP

I_D

0.88

SOT-523

100m

1.4Ω 2.5V

1. GATE

2. SOURCE

FEATURE

3. DRAIN

Low on-resistance

Fast switching speed

Low voltage drive makes this device ideal for

APPLICATION

Interfacing , Switching

Portable equipment

Easily designed drive circuits

Easy to parallel

Equivalent Circuit

MARKING

KNA

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-source voltage

Gate-source voltage

±20

V_GS

I_D

Continuous drain current

100

③

Power dissipation

P_D

0.63

③

Thermal resistance from junction to ambient

Operation Junction and Storage Temperature Range

R_θJA

200

℃/W

℃

T_J,T_stg

-55 ~+150

www.jscj-elec.com

Rev. - 1.0

12 3 4 5

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