Datasheet > 2SK3018WT1

2SK3018WT1

更新时间： 2024-09-21 12:23:51

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
3页	427K
描述
SOT-323 Plastic-Encapsulate MOSFETS

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中文翻译

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数据手册

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2SK3018WT1 数据手册

WILLAS

2SK3018WT1

SOT-323 Plastic-Encapsulate MOSFETS

N-channel MOSFET

SOT-323

FEATURES

Low on-resistance

Fast switching speed

1. GATE

Low voltage drive makes this device ideal for portable equipment

Easily designed drive circuits

2. SOURCE

3. DRAIN

Easy to parallel

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Marking: KN

Equivalent circuit

MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)

Units

Symbol Parameter

Value

VDS

VGSS

Drain-Source voltage

Gate-Source Voltage

±20

Continuous Drain Current

Power Dissipation

0.1

0.2

Junction Temperature

150

℃

Tstg

RθJA

Storage Temperature

-55-150

625

℃

Thermal Resistance from Junction to Ambient

℃ /W

MOSFET ELECTRICAL CHARACTERISTICS(T^a=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS VGS = 0V, ID = 10µA

µA

Zero Gate Voltage Drain Current

Gate –Source leakage current

Gate Threshold Voltage

IDSS

IGSS

VDS =30V,VGS = 0V

VGS =±20V, VDS = 0V

VDS = 3V, ID =100µA

VGS = 4V, ID =10mA

VGS =2.5V,ID =1mA

VDS =3V, ID = 10mA

0.2

±500

1.5

VGS(th)

0.8

Ω

Drain-Source On-Resistance

RDS(on)

gFS

Ω

Forward Transconductance

Dynamic Characteristics*

Input Capacitance

Ciss

Coss

Crss

VDS =5V,VGS =0V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics*

Turn-On Delay Time

Rise Time

td(on)

VGS =5V, VDD =5V,

I^D=10mA, Rg=10Ω, RL=500Ω

Turn-Off Delay Time

Fall Time

td(off)

*These parameters have no way to verify.

2012-09

WILLAS ELECTRONIC CORP.

12 3

中文翻译

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