Datasheet > 2SK3019TT1

2SK3019TT1

更新时间： 2022-05-19 11:46:05

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
3页	425K
描述
SOT-523 Plastic-Enc apsulate MOSFETS

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3019TT1 数据手册

WILLAS

2SK3019TT1

SOT-523 Plastic-Encapsulate MOSFETS

N-channel MOSFET

FEATURES

Low on-resistance

SOT-523

Fast switching speed

Low voltage drive makes this device ideal for portable equipment

Easily designed drive circuits

1. GATE

Easy to parallel

Pb-Free package is available

2. SOURCE

3. DRAIN

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Equivalent circuit

Marking: KN

MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)

Units

Symbol Parameter

Value

VDS

VGSS

Drain-Source Voltage

Gate-Source Voltage

±20

0.1

Continuous Drain Current

Thermal Resistance, Junction-to-Ambient

Power Dissipation

RθJA

833

0.15

℃ /W

Junction Temperature

Storage Temperature

150

℃

Tstg

-55~+150

MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate –Source leakage current

Gate Threshold Voltage

VDS

IDSS

VGS = 0V, ID = 10µA

VDS =30V,VGS = 0V

VGS =±20V, VDS = 0V

VDS = 3V, ID =100µA

VGS = 4V, ID =10mA

VGS =2.5V,ID =1mA

VDS =3V, ID = 10mA

µA

±1

1.5

IGSS

VGS(th)

0.8

Ω

Drain-Source On-Resistance

RDS(on)

gFS

Ω

Forward Transconductance

Dynamic Characteristics*

Input Capacitance

Ciss

Coss

Crss

VDS =5V,VGS =0V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics*

Turn-On Delay Time

Rise Time

td(on)

VGS =5V, VDD =5V,

I^D=10mA, Rg=10Ω, RL=500Ω,

Turn-Off Delay Time

Fall Time

td(off)

* These parameters have no way to verify.

2012-09

WILLAS ELECTRONIC CORP.

12 3

下载PDF

与2SK3019TT1相关器件

型号	品牌	描述	获取价格	数据表
2SK301P	PANASONIC	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction	获取价格
2SK301Q	PANASONIC	Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction	获取价格
2SK302	TOSHIBA	N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)	获取价格
2SK302	UTC	low-frequency general-purpose amplifier applicatio...	获取价格
2SK302_07	TOSHIBA	Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications	获取价格
2SK3020	MCC	Tape&Reel: 8Kpcs/Reel;	获取价格