Datasheet > 2SK301P

2SK301P

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	195K
描述
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, SC-43, 3 PIN

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2SK301P 数据手册

Silicon Junction FETs (Small Signal)

2SK0301 (2SK301)

Silicon N-Channel Junction FET

For low-frequency amplification

For switching

unit: mm

5.0±0.2

4.0±0.2

ꢀ Features

ꢁ Low noies, high gain

ꢁ High gate to drain voltage V_GDO

0.7±0.1

ꢀ Absolute Maximum Ratings (Ta = 25°C)

+0.15

–0.1

+0.15

0.45

–0.1

+0.6

–0.2

+0.6

2.5

–0.2

Parameter

Drain to Source voltage

Gate to Drain voltage

Gate to Source voltage

Drain current

Symbol

V_DSX

V_GDO

V_GSO

I_D

Ratings

Unit

1: Drain

2: Gate

3: Source

2 3

−55

JEDEC: TO-92

EIAJ: SC-43

TO-92-A1 Package

±30

°C

Gate current

I_G

Allowable power dissipation

Junction temperature

Storage temperature

P_D

250

T_j

125

T_stg

−55 to +125

°C

ꢀ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

I_DSS

V_DS= 10V, V_GS= 0

V_GS= −30V, V_DS= 0

_G= −100µA, V_DS= 0

I_GSS

V_GDC

V_GSC

g_m

−10

−55

2.5

−80

Gate to Source cut-off voltage

Mutual conductance

V_DS= 10V, I_D= 10µA

−5

V_DS= 10V, V_GS= 0, f = 1kHz

7.5

6.5

1.9

Input capacitance (Common Source) C_iss

V_DS= 10V, V_GS= 0, f = 1MHz

Reverse transfer capacitance (Common Source) C_rss

V_DS= 10V, V_GS= 0, R_g= 100kΩ

Noise figure

0.5

f = 100Hz

^*I_DSSrank classification

Runk

I_DSS(mA)

1 to 3

2 to 6.5

5 to 12

10 to 20

Note) The part number in the parenthesis shows conventional part number.

247

12 3

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