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2SK3019TL PDF预览

2SK3019TL

更新时间: 2024-02-12 04:08:14
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号场效应晶体管开关光电二极管驱动
页数 文件大小 规格书
4页 78K
描述
2.5V Drive Nch MOS FET

2SK3019TL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:1.6湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:10
Base Number Matches:1

2SK3019TL 数据手册

 浏览型号2SK3019TL的Datasheet PDF文件第2页浏览型号2SK3019TL的Datasheet PDF文件第3页浏览型号2SK3019TL的Datasheet PDF文件第4页 
2SK3019  
Transistor  
2.5V Drive Nch MOS FET  
2SK3019  
zDimensions (Unit : mm)  
zStructure  
Silicon N-channel  
MOSFET  
EMT3  
0.7  
1.6  
0.3  
0.55  
( )  
3
zApplications  
( )  
2
( )  
1
Interfacing, switching (30V, 100mA)  
0.2  
0.2  
0.15  
0.5 0.5  
1.0  
(1)Source  
(2)Gate  
zFeatures  
1) Low on-resistance.  
(3)Drain  
Abbreviated symbol : KN  
2) Fast switching speed.  
3) Low voltage drive (2.5V) makes this device ideal for  
portable equipment.  
4) Drive circuits can be simple.  
5) Parallel use is easy.  
zPackaging specifications  
zEquivalent circuit  
Package  
Code  
Taping  
TL  
Drain  
Type  
Basic ordering unit  
(pieces)  
3000  
2SK3019  
Gate  
zAbsolute maximum ratings (Ta=25°C)  
Gate  
Protection  
Diode  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
30  
Unit  
V
Source  
VDSS  
GSS  
V
20  
V
A protection diode is included between the gate  
and the source terminals to protect the diode  
against static electricity when the product is in use.  
Use a protection circuit when the fixed voltages  
are exceeded.  
Continuous  
Pulsed  
I
D
100  
mA  
mA  
mW  
°C  
Drain current  
1
I
DP  
400  
2
Total power dissipation  
Channel temperature  
P
D
150  
Tch  
150  
Storage temperature  
Tstg  
55 to +150  
°C  
1 Pw10µs, Duty cycle1%  
2 With each pin mounted on the recommended lands.  
zThermal resistance  
Parameter  
Channel to ambient  
Symbol  
Rth(ch-a) ∗  
Limits  
833  
Unit  
°C / W  
With each pin mounted on the recommended lands.  
Rev.C  
1/3  

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