2SK3019
Transistor
zElectrical characteristics (Ta=25°C)
Symbol Min.
Typ.
−
Max.
1
Unit
µA
V
Conditions
V
GS= 20V, VDS=0V
Parameter
I
GSS
(BR)DSS
DSS
−
30
−
Gate-source leakage
V
−
−
I
D=10µA, VGS=0V
Drain-source breakdown voltage
I
−
1.0
1.5
8
µA
V
V
V
DS=30V, VGS=0V
Zero gate voltage drain curren
t
V
GS(th)
DS(on)
DS(on)
0.8
−
−
DS=3V, I =100µA
D
Gate threshold voltage
R
R
5
Ω
I
I
I
D
D
D
=10mA, VGS=4V
=1mA, VGS=2.5V
=10mA, VDS=3V
DS=5V
Static drain-source on-state
resistance
−
7
13
−
Ω
|Yfs
|
20
−
−
ms
pF
pF
pF
ns
ns
ns
ns
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
oss
rss
d(on)
13
9
−
V
V
C
−
−
GS=0V
C
−
4
−
f=1MHz
t
t
−
15
35
80
80
−
I
D=10mA, VDD 5V
t
r
−
−
V
GS=5V
d(off)
−
−
Turn-off delay time
Fall time
RL=500Ω
t
f
−
−
RG
=10Ω
zElectrical characteristic curves
0.15
200m
2
1.5
1
V
DS=3V
V
DS=3V
4V
3V
100m
50m
I
D
=0.1mA
Pulsed
Ta=25°C
Pulsed
Pulsed
3.5V
20m
10m
5m
0.1
0.05
0
2.5V
2V
2m
1m
Ta=125°C
75°C
25°C
−25°C
0.5
0
0.5m
0.2m
0.1m
V
2
GS=1.5V
0
1
3
4
5
−50 −25
0
25
50
75 100 125 150
3
0
1
2
4
DRAIN-SOURCE VOLTAGE : VDS (V)
CHANNEL TEMPERATURE : Tch (°C)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
50
50
15
V
GS=4V
Ta=25°C
Pulsed
V
GS=2.5V
Pulsed
Pulsed
Ta=125°C
75°C
Ta=125°C
75°C
20
10
5
20
10
5
25°C
−25°C
25°C
10
5
−25°C
2
2
I
D=0.1A
1
1
I
D=0.05A
0.5
0.001 0.002
0.5
0.001 0.002
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
5
10
15
20
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Rev.C
2/3