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2SK3019TL PDF预览

2SK3019TL

更新时间: 2024-01-09 12:59:09
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号场效应晶体管开关光电二极管驱动
页数 文件大小 规格书
4页 78K
描述
2.5V Drive Nch MOS FET

2SK3019TL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:1.6湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:10
Base Number Matches:1

2SK3019TL 数据手册

 浏览型号2SK3019TL的Datasheet PDF文件第1页浏览型号2SK3019TL的Datasheet PDF文件第3页浏览型号2SK3019TL的Datasheet PDF文件第4页 
2SK3019  
Transistor  
zElectrical characteristics (Ta=25°C)  
Symbol Min.  
Typ.  
Max.  
1
Unit  
µA  
V
Conditions  
V
GS= 20V, VDS=0V  
Parameter  
I
GSS  
(BR)DSS  
DSS  
30  
Gate-source leakage  
V
I
D=10µA, VGS=0V  
Drain-source breakdown voltage  
I
1.0  
1.5  
8
µA  
V
V
V
DS=30V, VGS=0V  
Zero gate voltage drain curren  
t
V
GS(th)  
DS(on)  
DS(on)  
0.8  
DS=3V, I =100µA  
D
Gate threshold voltage  
R
R
5
I
I
I
D
D
D
=10mA, VGS=4V  
=1mA, VGS=2.5V  
=10mA, VDS=3V  
DS=5V  
Static drain-source on-state  
resistance  
7
13  
|Yfs  
|
20  
ms  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C
iss  
oss  
rss  
d(on)  
13  
9
V
V
C
GS=0V  
C
4
f=1MHz  
t
t
15  
35  
80  
80  
I
D=10mA, VDD 5V  
t
r
V
GS=5V  
d(off)  
Turn-off delay time  
Fall time  
RL=500Ω  
t
f
RG  
=10Ω  
zElectrical characteristic curves  
0.15  
200m  
2
1.5  
1
V
DS=3V  
V
DS=3V  
4V  
3V  
100m  
50m  
I
D
=0.1mA  
Pulsed  
Ta=25°C  
Pulsed  
Pulsed  
3.5V  
20m  
10m  
5m  
0.1  
0.05  
0
2.5V  
2V  
2m  
1m  
Ta=125°C  
75°C  
25°C  
25°C  
0.5  
0
0.5m  
0.2m  
0.1m  
V
2
GS=1.5V  
0
1
3
4
5
50 25  
0
25  
50  
75 100 125 150  
3
0
1
2
4
DRAIN-SOURCE VOLTAGE : VDS (V)  
CHANNEL TEMPERATURE : Tch (°C)  
GATE-SOURCE VOLTAGE : VGS (V)  
Fig.1 Typical output characteristics  
Fig.2 Typical transfer characteristics  
Fig.3 Gate threshold voltage vs.  
channel temperature  
50  
50  
15  
V
GS=4V  
Ta=25°C  
Pulsed  
V
GS=2.5V  
Pulsed  
Pulsed  
Ta=125°C  
75°C  
Ta=125°C  
75°C  
20  
10  
5
20  
10  
5
25°C  
25°C  
25°C  
10  
5
25°C  
2
2
I
D=0.1A  
1
1
I
D=0.05A  
0.5  
0.001 0.002  
0.5  
0.001 0.002  
0
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
0
5
10  
15  
20  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
DRAIN CURRENT : I  
D
(A)  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN CURRENT : ID (A)  
Fig.4 Static drain-source on-state  
resistance vs. drain current (Ι)  
Fig.6 Static drain-source  
on-state resistance vs.  
gate-source voltage  
Fig.5 Static drain-source on-state  
resistance vs. drain current (ΙΙ)  
Rev.C  
2/3  

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