Datasheet > 2SK30

2SK30

更新时间： 2024-09-23 22:35:55

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描述
Silicon N-Channel Power F-MOS FET

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中文翻译

获取价格

数据手册

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2SK30 数据手册

Power F-MOS FETs

2SK3049

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed

● High-speed switching

● Low ON-resistance

unit: mm

4.6±0.2

9.9±0.3

2.9±0.2

● No secondary breakdown

φ3.2±0.1

■ Applications

● Contactless relay

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

1.4±0.2

2.6±0.1

1.6±0.2

● Switching power supply

0.8±0.1

0.55±0.15

■ Absolute Maximum Ratings (T_C= 25°C)

2.54±0.3

5.08±0.5

Parameter

Symbol

Ratings

Unit

1: Gate

2: Drain

Drain to Source breakdown voltage V_DSS

600

3: Source

TO-220D Package

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±30

±5

Drain current

I_DP

±10

EAS^*

62.5

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 5mH, I_L= 5A, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

I_DSS

Conditions

V_DS= 480V, V_GS= 0

V_GS= ±30V, V_DS= 0

I_D= 1mA, V_GS= 0

V_DS= 25V, I_D= 1mA

V_GS= 10V, I_D= 3A

V_DS= 25V, I_D= 3A

I_DR= 5A, V_GS= 0

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

100

±1

I_GSS

Drain to Source breakdown voltage V_DSS

600

Gate threshold voltage

V_th

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

R_DS(on)

| Y_fs|

V_DSF

0.85

3.4

1.5

Ω

1.7

−1.6

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

1200

140

V_DS= 20V, V_GS= 0, f = 1MHz

Turn-on time (delay time)

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_DD= 200V, I_D= 3A

Turn-off time (delay time)

Fall time

V_GS= 10V, R_L= 66.6Ω

150

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