2SK3001

更新时间： 2024-01-26 02:34:18

品牌	Logo	应用领域
日立 - HITACHI		放大器
页数	文件大小	规格书
14页	110K
描述
GaAs HEMT Low Noise Amplifier

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2SK3001 数据手册

2SK3001

GaAs HEMT

Low Noise Amplifier

ADE-208-597(Z)

1st. Edition

December 1997

Features

Excellent low noise characteristics.

Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)

High associated gain.

Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)

Small package. (CMPAK-4)

Outline

This document may, wholly or partially, be subject to change without notice.

This Device is sensitive to Electro Static Discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

CAUTION

This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not

treat them mechanically in the manner which might expose to the Air. And it should never be thrown

out with general industrial or domestic wastes.

12 3 4 5 6 7...14

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