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2SK2788 PDF预览

2SK2788

更新时间: 2024-11-19 22:52:55
品牌 Logo 应用领域
日立 - HITACHI 晶体开关晶体管电源开关
页数 文件大小 规格书
9页 46K
描述
Silicon N Channel MOS FET High Speed Power Switching

2SK2788 数据手册

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2SK2788  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-538  
1st. Edition  
Features  
Low on-resistance  
RDS(on) = 0.12typ (VGS = 10 V, ID = 1 A)  
Low drive current  
High speed switching  
4V gate drive devices.  
Outline  
UPAK  
1
2
3
D
4
G
1. Gate  
2. Drain  
3. Source  
4. Drain  
S

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